收藏本站
December 2010
FDB14AN06LA0_F085
N-Channel PowerTrench ? MOSFET
60V, 60A, 14.6m ?
Features
? r DS(ON) = 12.8m ? (Typ.), V GS = 5V, I D = 60A
? Q g (tot) = 24nC (Typ.), V GS = 5V
? Low Miller Charge
? Low Q RR Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
?   Qualified to AEC Q101
? RoHS Compliant
Applications
? Motor / Body Load Control
? ABS Systems
? Powertrain Management
? Injection Systems
? DC-DC converters and Off-line UPS
?   Distributed Power Architectures and VRMs
? Primary Switch for 12V and 24V systems
Formerly developmental type 83557
D
GATE
G
SOURCE
DRAIN
TO-263AB
(FLANGE)
S
FDB SERIES
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
60
± 20
Units
V
V
Drain Current
Continuous (T C = 25 o C, V GS = 10V)
67
A
Continuous (T C = 25 C, V GS = 5V)
C
I D
E AS
P D
T J , T STG
o
Continuous (T A = 25 o C, V GS = 5V, R θ JA = 43 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
60
10
Figure 4
46
125
0.83
-55 to 175
A
A
A
mJ
W
W/ o C
o
Thermal Characteristics
R θ JC
Maximum Thermal Resistance Junction to Case TO-263
1.2
o C/W
R θ JA
Maximum Thermal Resistance Junction to Ambient TO-263, 1in 2
copper pad area
43
o
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
?2010 Fairchild Semiconductor Corporation
FDB14AN06LA0_F085 Rev. C
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDB14N30TM MOSFET N-CH 300V 14A D2PAK
FDB150N10 MOSFET N-CH 100V 57A D2PAK
FDB15N50 MOSFET N-CH 500V 15A TO-263AB
FDB2532_F085 MOSFET N-CH 150V 79A D2PAK
FDB2614 MOSFET N-CH 200V 62A D2PAK
FDB2710 MOSFET N-CH 250V 50A D2PAK
FDB28N30TM MOSFET N-CH 300V 28A D2PAK
FDB3502 MOSFET N-CH 75V 6A TO-263AB
相关代理商/技术参数
FDB14N30 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:300V N-Channel MOSFET
FDB14N30TM 功能描述:MOSFET 300V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB150N10 功能描述:MOSFET 100V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB15N50 功能描述:MOSFET 15A 500V 0.38 Ohm N-Ch SMPS Pwr RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB15N50 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 500V 15A TO-263
FDB15N50_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FDB-15PF 制造商:HRS 制造商全称:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE
FDB-15SF 制造商:HRS 制造商全称:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE